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RF081M2S
Diodes
Super fast recovery diode
RF081M2S
Series Dimensions (Unit : mm)
1.60.1 0.10.1 0.05
Land size figure (Unit : mm)
Standard Fast Recovery
1.2 0.85
Features 1) Small power mold type. (PMDU) 2) High switching speed. 3) Low Reverse current
2.60.1
3.50.2
PMDU
Structure Construction Silicon epitaxial planar
0.90.1
ROHM : PMDU JEDEC :SOD-123 Manufacture Date
0.80.1
Taping specifications (Unit : mm)
4.00.1 2.00.05 1.550.05 1.750.1 0.250.05
3.50.05
8.00.2
1.810.1
4.00.1
1.00.1
3.710.1
1.5MAX
Absolute maximum ratings (Ta=25C)
Parameter Repetitive peak Reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 200 200 0.8 1.0 15 150 -55 to +150 Unit V V A A Direct voltage Glass epoxy substrate mounted 50x50mm Glass epoxy substrate mounted
60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25
Conditions
Electrical characteristic (Ta=25C)
Parameter Forward voltage Reverse current Reverse recovery time Thermal Resistance Symbol VF IR trr Rth(j-l) Min. Typ. 0.83 0.86 0.01 12 Max. 0.95 0.98 10 25 20 Unit V A ns W IF=0.8A IF=1.0A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR junction to lead Conditions
3.05
Applications General rectification
1/3
RF081M2S
Diodes
Electrical characteristic curves
10
Tj=150 Tj=125 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 1000 10000 Tj=150 CAPACITANCE BETWEEN TERMINALS:Ct(pF)
100
f=1MHz
1
100
Tj=125 Tj=25
10
0.1
Tj=25
10
0.01 200 400 600 800 1000 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 1200
1 0 50 100 150 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 200
1 0 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
900 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) Tj=25 IF=1.0A n=20pcs
100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Tj=25 VR=200V n=20pcs
60 Tj=25 f=1MHz VR=0V n=10pcs
850
55
800 AVE:818mV 750
10 AVE:10.8nA
50 AVE:51.5pF 45
700 VF DISPERSION MAP
1 IR DISPERSION MAP
40 Ct DISPERSION MAP
100 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A)
30 25 20 15 10 5 0 IFSM DISPERSION MAP trr DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) Tj=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
1000
80
Ifsm
100
8.3ms
8.3ms
60 AVE:69.5A 40
1cyc
AVE:12.2ns
10
20
0
1 1 10 100
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
30
1000
ELECTROSTATIC DISCHARGE TEST ESD(KV) Ifsm t
1000
No break at 30kV
IM=10mA
IF=0.5A
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
25 20 15 10 5 AVE:13.6kV
Rth(j-a) 100
1ms time 300us
PEAK SURGE FORWARD CURRENT:IFSM(A)
100
Mounted on epoxy board 10
Rth(j-c)
10
1
1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0
C=200pF R=0
C=100pF R=1.5k
0.1
0.001 0.01 0.1 1 10 100 1000
ESD DISPERSION MAP
TIME:t(s) Rth-t CHARACTERISTICS
2/3
RF081M2S
Diodes
0A 0V t
1 D=0.8 D.C.
2
Io VR D=t/T VR=160V Tj=150
0A 0V
D.C.
Io t T VR D=t/T VR=10V Tj=150
2
T
D.C.
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
D=0.5 half sin wave
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.8
1.5
D=0.8 D=0.5
1.5
D=0.8 D=0.5 half sin wave D=0.2
FORWARD POWER DISSIPATION:Pf(W)
0.6 D=0.2 D=0.1 0.4 D=0.05
1
half sin wave D=0.2 D=0.1 D=0.05
1
0.2
0.5
0.5
D=0.1 D=0.05
0 0 0.5 1 1.5 2
0 0 30 60 90 120 150
0 0 30 60 90 120 150
AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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